Ge1Sb4Te7 (GST147) was adopted as the storage media for multiple resistance levels. It was exhibited that the resistivity of GST147 gradually dropped by about 3-4 orders of magnitude due to crystallization with the annealing temperature, which is critical to realize multiple resistance levels. The ultra-multiple 27 resistance levels in TiSi3/GST147 lateral phase-change memory device were demonstrated simply by controlling the maximum sweeping currents for programming the device resistance. Furthermore, the reproducibility of the six resistance levels was demonstrated and these levels were distinguishable from each other. This study indicates that GST147 is a media suitable for stable ultra-multiple level storage, enabling low-cost ultrahigh-density nonvolatile memory. (C) 2016 Elsevier B.V. All rights reserved.