졸-겔법에 의해 제작된 적외선 센서용 (Pb,La)TiO3 강유전체 박막의 특성

서광종; 장호정; 장지근; Kwang Jong Suh; Ho Jung Chang; Gee Keun Chang

Korean Journal of Materials Research, Vol.9, No.5, 484-490, May, 1999

Export Citation

졸-겔법에 의해 제작된 적외선 센서용 (Pb,La)TiO3 강유전체 박막의 특성

Properties of (Pb,La)Ti03 Ferroelectric Thin Films by Sol-Gel Method for the Infrared Sensors

서광종, 장호정, 장지근

단국대학교 전자공학파

Kwang Jong Suh, Ho Jung Chang, and Gee Keun Chang

Department of Electronics Engineering, Dankook University, 330-714, Korea

초록

Pt/SiOz!Si의 기판위에 (Pb,La) TiO3 (PLT) 박막올 졸-겔 방법으로 제작하여 La 첨가량 및 후속열처리 옹도에 따른 결정학적, 전기적 특성을 조사하였다. 600 ℃ 이상의 옹도에서 열처리된 PLT 박막 시료의 경우 La 도핑량에 관계없이 전형척인 perovskite 결정구조를 보여 주었다. La 이 전혀 첨가되지 않은 PbTi03(PT) 시료에 10 mole% La을 첨가할 경우 (PLT-10 시료) c축 배향도는 약 63% 에서 26%로 크게 감소하였다. PLT-10 박막시료의 깊이에 따른 AES 분석결과 박막내의 각 성분원소들이 비교적 균일하게 분포되어 있고 하부전극 (Pt) 과 PLT 박막층 사이에는 상호반응없이 비교적 안정된 막을 형성하고 있음을 알수 있었다. 650℃ 에서 열처리된 PLT-10 박막의 유전상수 (εr)와 유전정접 (tan ð) 은 약 193과 0.02 의 값올 나타내였다. 후속열처리 온도를 600℃ 에서 700℃로 증가함에 따라 잔류분극 (2Pr,Pr+-Pr-) 은 약 4uC/cm2에서 약 16uC/cm2로 크게 증가하였으며 잔류분극값의 증가는 후속열처리에 의해 결정성이 개선되었기 때문이라 판단된다. 30℃ 온도부근에셔 초전계수 (r) 는 약 4.0nC/cm2 ㆍ ℃의 값을 나타내었다.

(Pb,La)TiO3 (PLT) thin films were prepared on Pt/SiO2/Si substrates by the sol-gel method and investigated the crystalline and electrical properties according to La concentration and post-annealing temperatures. The PLT films annealed at above 600℃ were exhibited the typical perovskite structures regardless of La contents. When the PbTiO3(PT) films were doped with La concentration up to 10mol%(PLT-10), the degree of z-axis orientation was greatly decreased from 63% to 26%. From AES depth profiles for the PLT-10 samples, no remarkable inter-reaction between PLT film and lower Pt electrode was found. The remanent polarization (2Pr,Pr + -Pr- ) were increased from 4uC/cm2 to 16uC/cm2 as the annealing temperature increased from 600 ℃to 700℃. This result may be ascribed to the improvement of crystallinity by the high temperature post-annealing. The dielectric constant (εr) and tangent loss(tan δ) of the PLT-10 films annealed at 650 ℃ were about 193 and 0.02, respectively with the pyroelectric coefficient(r) of around 4.0nC/cm2 ㆍ℃ at 30℃.

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[1] Scott JF, de Araujo CAP, Yoshimori H, Azuma M, Ueda T, Kano G, Ferroelectrics, 133, 47 (1992)

[2] Shibata K, Nakano S, Kuwano Y, Electronics Ceramic, 25, 56 (1991)

[3] 김영해역, 센서 인터페이싱 No.l, 온도 · 습도센서 활용편, 기전연구사, pp.238, (1993).

[4] Takayama R, Tomita Y, Iijama K, Ueda I, J. Appl. Phys., 63, 5868 (1987)

[5] Okada M, Watanabe H, Murakami M, Nishiwaki A, Tomita K, 얼본 세라믹 협회 학술논문지, 96(6), 687 (1988)

[6] Gao Y, Bai GR, Merkle KL, Shi Y, Chang HLM, Shen Z, Lam DJ, J. Mater. Res., 8(1), 145 (1993)

[7] Bai GR, Chang HLM, Kim HK, Foster CM, Lam DJ, Appl. Phys. Lett., 61(4), 408 (1992)

[8] Ogawa T, Senda A, Kasanami T, Jpn. J. Appl. Phys., 30, 2145 (1991)

[9] Korne M, Amikawa K, Nakayama H, Onoda M, 일본 세라믹협회 학술논문지, 98(11), 1231 (1990)

[10] Maiwa H, Ichinose N, Okazaki K, Jpn. J. Appl. Phys., 33(9B), 5240 (1994)

[11] Wang W, Chen Z, Adachi M, Kawabata A, Integrated Ferroelectrics, 12, 251 (1996)

[12] Ogasawara M, Shimizu M, Shiozaki T, Jpn. J. Appl. Phys., 31(9B), 2971 (1992)

[13] Kidoh H, Ogawa T, Yashlma H, Morimoto A, Shimizu T, Jpn. J. Appl. Phys., 31(9B), 2856 (1992)

[14] Tokumitsu E, Tanisake N, Ishiwara H, Jpn. J. Appl. Phys., 33(9B), 5201 (1994)

[15] Amanuma K, Hase T, Yasaka YM, Jpn. J. Appl. Phys., 33(9B), 5211 (1994)

[16] Iijima K, Tomida Y, Takeyama R, Ueda I, J. Appl. Phys., 60, 361 (1986)

[17] Polla DL, Ye C, Schillar P, Tamagawa T, Robbins WP, Glumac D, Hiswes CC, Mater. Res. Soc. Symp. Proc., 243, 55 (1992)

[18] Deb KK, Bennett KW, Brody PS, Melnick BM, Integrated Ferroelectrics, 6, 253 (1995)

[19] Vanbuskira PC, Roeder J, Bilodeau S, Pombrik S, Beratan H, Integrated Ferroelectrics, 6, 141 (1995)

[20] Shyu JJ, Mo KL, Jpn. J. Appl. Phys., 34(10), 5683 (1995)

[21] Sayer M, Mansingh A, Arora AK, Integrated Ferroelectrics, 1, 129 (1992)

[22] Chang GK, Kim MY, Yi SY, Chang HJ, Korean J. Mater. Res., 6(8), 825 (1996)

[23] Ye C, Tamagawa T, Schiller P, Polla D, Sens. Actuators A-Phys., 35, 77 (1992)