SnO/Sn 혼합 타겟을 이용한 SnO 박막 제조 및 특성

김철; 김성동; 김은경; Cheol Kim; Sungdong Kim; Sarah Eunkyung Kim

Korean Journal of Materials Research, Vol.26, No.4, 222-227, April, 2016

DOI10.3740/MRSK.2016.26.4.222 Export Citation

SnO/Sn 혼합 타겟을 이용한 SnO 박막 제조 및 특성

Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target

김철, 김성동¹, 김은경^†

서울과학기술대학교 NID융합기술대학원
¹서울과학기술대학교 기계시스템디자인공학과

Cheol Kim, Sungdong Kim¹, and Sarah Eunkyung Kim^†

Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
¹Department of Mechanical System Design Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea

E-mail:

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of PO2 = 3 % was obtained with > 80 % transmittance, carrier concentration of 1.12 × 1018 cm-3, and mobility of 1.18 cm2V- 1s-1. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

Keywords:SnO;tin oxide;reactive sputtering;composite target;p-type thin film

[References]

Hosono H, Kikuchi N, Ueda N, Kawazoe H, J. Non-Cryst. Solids, 198-200, 165 (1996)
Leja E, Korecki J, Krop K, Toll K, Thin Solid Films, 59, 147 (1979)
Batzill M, Diebold U, Prog. Surf. Sci., 79, 47 (2005)
Lewis BG, Paine DC, MRS Bull., 25, 22 (2000)
Demarne V, Grisel A, Sens. Actuators A-Phys., 13, 301 (1988)
Ogo Y, Hiramatsu H, Nomura K, Yanagi H, Kamiya T, Hirano M, Hosono H, Appl. Phys. Lett., 93, 032113 (2008)
Hsu PC, Hsu CJ, Chang CH, Tsai SP, Chen WC, Hsieh HH, Wu CC, ACS Appl. Mater. Interfaces, 6, 13724 (2014)
Hosono H, J. Non-Cryst. Solids, 352, 851 (2006)
Ji Z, He Z, Song Y, Liu K, Ye Z, J. Cryst. Growth, 259, 282 (2005)
Ni J, Zhao X, Zheng X, Zhao J, Liu B, Acta Mater., 58, 278 (2009)
Zhao J, Zhao XJ, Ni JM, Tao HZ, Acta Mater., 58, 6243 (2010)
Pan XQ, Fu L, J. Appl. Phys., 58, 6048 (2001)
Liang LY, Liu ZM, Cao HT, Shi YY, Sun XL, Yu Z, Chen AH, Zhang HZ, Fang YQ, ACS Appl. Mater. Interfaces, 2, 1565 (2010)
Kim YR, Kim SE, J. Kor. Ceram. Soc., 49, 448 (2012)
Lee J, Kim E, Kim T, Kang YB, Korean J. Mater. Res., 20(1), 42 (2010)
Kim HD, Choi JS, Shin DW, J. Kor. Ceram. Soc., 39, 386 (2002)
Kim SP, Kim SD, Kim SE, J. Kor. Ceram. Soc., 48, 316 (2011)
Hosono H, Ogo Y, Yanagi H, Kamiya T, Electrochem. Solid State Lett., 14, H13 (2011)
Szuber J, Czempik G, Larciprete R, Koziej D, Adamowicz B, Thin Solid Films, 391(2), 198 (2001)
Jiang YH, Chiu IC, Kao PK, He JC, Wu YH, Yang YJ, Hsu CC, Cheng IC, Chen JZ, Appl. Surf. Sci., 327, 358 (2015)
Yang T, Zhao J, Li X, Gao X, Xue C, Wu Y, Tai R, Mater. Lett., 139, 39 (2015)
Liao M, Xiao Z, Ran FY, Kumomi H, Kamiya T, Hosono H, ECS J. Solid State Sci. Technol., 4, Q26 (2014)
Yabuta H, Kaji N, Hayashi R, Kumomi H, Nomura K, Kamiya T, Hirano M, Hosono H, Appl. Phys. Lett., 97, 072111 (2010)
Guo W, Fu F, Zhang Y, Zhang K, Liang LY, Liu ZM, Cao HT, Pan XQ, Appl. Phys. Lett., 96, 042113 (2010)
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[1] Hosono H, Kikuchi N, Ueda N, Kawazoe H, J. Non-Cryst. Solids, 198-200, 165 (1996)

[2] Leja E, Korecki J, Krop K, Toll K, Thin Solid Films, 59, 147 (1979)

[3] Batzill M, Diebold U, Prog. Surf. Sci., 79, 47 (2005)

[4] Lewis BG, Paine DC, MRS Bull., 25, 22 (2000)

[5] Demarne V, Grisel A, Sens. Actuators A-Phys., 13, 301 (1988)

[6] Ogo Y, Hiramatsu H, Nomura K, Yanagi H, Kamiya T, Hirano M, Hosono H, Appl. Phys. Lett., 93, 032113 (2008)

[7] Hsu PC, Hsu CJ, Chang CH, Tsai SP, Chen WC, Hsieh HH, Wu CC, ACS Appl. Mater. Interfaces, 6, 13724 (2014)

[8] Hosono H, J. Non-Cryst. Solids, 352, 851 (2006)

[9] Ji Z, He Z, Song Y, Liu K, Ye Z, J. Cryst. Growth, 259, 282 (2005)

[10] Ni J, Zhao X, Zheng X, Zhao J, Liu B, Acta Mater., 58, 278 (2009)

[11] Zhao J, Zhao XJ, Ni JM, Tao HZ, Acta Mater., 58, 6243 (2010)

[12] Pan XQ, Fu L, J. Appl. Phys., 58, 6048 (2001)

[13] Liang LY, Liu ZM, Cao HT, Shi YY, Sun XL, Yu Z, Chen AH, Zhang HZ, Fang YQ, ACS Appl. Mater. Interfaces, 2, 1565 (2010)

[14] Kim YR, Kim SE, J. Kor. Ceram. Soc., 49, 448 (2012)

[15] Lee J, Kim E, Kim T, Kang YB, Korean J. Mater. Res., 20(1), 42 (2010)

[16] Kim HD, Choi JS, Shin DW, J. Kor. Ceram. Soc., 39, 386 (2002)

[17] Kim SP, Kim SD, Kim SE, J. Kor. Ceram. Soc., 48, 316 (2011)

[18] Hosono H, Ogo Y, Yanagi H, Kamiya T, Electrochem. Solid State Lett., 14, H13 (2011)

[19] Szuber J, Czempik G, Larciprete R, Koziej D, Adamowicz B, Thin Solid Films, 391(2), 198 (2001)

[20] Jiang YH, Chiu IC, Kao PK, He JC, Wu YH, Yang YJ, Hsu CC, Cheng IC, Chen JZ, Appl. Surf. Sci., 327, 358 (2015)

[21] Yang T, Zhao J, Li X, Gao X, Xue C, Wu Y, Tai R, Mater. Lett., 139, 39 (2015)

[22] Liao M, Xiao Z, Ran FY, Kumomi H, Kamiya T, Hosono H, ECS J. Solid State Sci. Technol., 4, Q26 (2014)

[23] Yabuta H, Kaji N, Hayashi R, Kumomi H, Nomura K, Kamiya T, Hirano M, Hosono H, Appl. Phys. Lett., 97, 072111 (2010)

[24] Guo W, Fu F, Zhang Y, Zhang K, Liang LY, Liu ZM, Cao HT, Pan XQ, Appl. Phys. Lett., 96, 042113 (2010)

[25] Stenzel O, The physics of Thin Film Optical Sepctra:An Introduction, p.214, Springer (2005).