Field-effect transistor memories usually require one additional charge storage layer between the gate contact and organic semiconductor channel. To avoid such complication, new donor-acceptor rod-coil diblock copolymers (P3HT(44)-b-Piso(n)) of poly(3-hexylthiophene)(P3HT)-block-poly(pendent isoindigo) (Piso) are designed, which exhibit high performance transistor memory characteristics without additional charge storage layer. The P3HT and Piso blocks are acted as the charge transporting and storage elements, respectively. The prepared P3HT(44)-b-Piso(n) can be self-assembled into fibrillar-like nanostructures after the thermal annealing process, confirmed by atomic force microscopy and grazing-incidence X-ray diffraction. The lowest-unoccupied molecular orbital levels of the studied polymers are significantly lowered as the block length of Piso increases, leading to a stronger electron affinity as well as charge storage capability. The field-effect transistors (FETs) fabricated from P3HT(44)-b-Piso(n) possess p-type mobilities up to 4.56 x 10(-2) cm(2) V-1 s(-1), similar to that of the regioregular P3HT. More interestingly, the FET memory devices fabricated from P3HT(44)-b-Piso(n) exhibit a memory window ranging from 26 to 79 V by manipulating the block length of Piso, and showed stable long-term data endurance. The results suggest that the FET characteristics and data storage capability can be effectively tuned simultaneously through donor/acceptor ratio and thin film morphology in the block copolymer system.