We present all printed non-volatile resistive switches based on zinc stannate (ZnSnO3) for the memory applications. The device is fabricated on a flexible poly(ethyleneterephthalate) (PET) substrate through electrohydrodynamic (EHD) technique, where active layer of ZnSnO3 (similar to 130 nm) is deposited on the indium tin oxide (ITO) coated PET and a 100 mm silver line is deposited with thickness of 350 nm and length of 2 mm as a top electrode. The device exhibits resistive switching behavior at dual polarity voltage +/- 8 V. The measured value of high resistance state (HRS) and low resistance state (LRS) are 250 M Omega and 7.6 M Omega respectively. Nine (9) memristors are fabricated on a single substrate and their variability from device to device is measured to be 1 MU and 48 MU for LRS and HRS respectively. Furthermore, the device showed bendability down to 8 mm diameter and ON/OFF endurance for more than 200 cycles. Mechanical and surface morphology characterizations are carried out by using mechanical stress machine and field emission scanning electron microscopy (FE-SEM). (C) 2016 Elsevier B.V. All rights reserved.