CBrCl3 is shown to be a useful precursor for heavy p-type carbon doping of GaAsxP1-x grown via metalorganic chemical vapor deposition (MOCVD) across a range of compositions. Structural and electrical properties of the GaAsP films were measured for various processing conditions. Use of CBrCl3 decreased the growth rate of GaAsP by up to 32% and decreases x by up to 0.025. The dependence of these effects on precursor inputs is investigated, allowing C-doped GaAsP films to be grown with good thickness and compositional control. Hole concentrations of greater than 2 x 10(19) cm(-3) were measured for values of x from 0.76 to 0.90. (C) 2016 Elsevier B.V. All rights reserved.