GaN and AlGaN alloys were prepared by ethylene diamine tetra acetic acid (EDTA) complex route with five different Al molar ratios. The structure, morphology and luminescence properties of GaN and AlxGa1-xN were investigated by PXRD, SEM, EDX, HRTEM, PL and Raman techniques. The PXRD pattern confirms the formation of hexagonal wurtzite structure of GaN and AlxGa1-xN alloys. When Al is alloy with GaN hexagonal shaped particles change into agglomerated spherical and plate-like morphology of AlxGa1-xN as confirmed by SEM analysis. The results also indicate that with increasing Al composition, the morphology of AlxGa1-xN changes. HRTEM analysis shows that particle size decreases from 24 to 10 nm, with increasing Al concentration. Raman analysis confirms the presence of E-2(high), A(1)(TO), E-1(LO) and A(1)(LO) phonon frequencies in AIGaN alloy. PL spectra confirms that the energy of the near band edge emission changes from 383 to 337 nm with change in Al concentration in AlxGa1-xN samples. (C) 2016 Elsevier Ltd. All rights reserved.