The lead titanate thin films were deposited using in situ layer-by-layer reactive magnetron sputtering. The synthesis of films was performed on platinized silicon (Pt/Ti/SiO2/Si) substrates at 450-600 degrees C temperatures using Ti2O seed layer. The influence of the substrate temperature on the surface morphology, phase composition, and electrical properties of PbTiO3 films were investigated. Experimental results demonstrated that the deposition at higher substrate temperatures resulted in the formation of films with the lower surface roughness values. The increase of the substrate temperature has no effect on the tetragonality value of the films. The preferential orientation in the films was changed and the crystallites size slightly increased with the increased substrate temperature from 450 degrees C to 550 degrees C. Hysteresis measurements show that the films exhibit ferroelectric properties with a maximum coercive field of E-c = 150 kV/cm and of P-r = 60 mu C/cm(2). Coercive field dependence on the frequency measurements indicated that the creep regime of domain wall motions dominated till 1 kHz of frequency. (C) 2015 Elsevier B.V. All rights reserved.