A new hybrid heterostructure of p-type copper phthalocyanine (CuPc) and n-type porous GaN (PGaN) has been fabricated by electrophoretic deposition. The influence of CuPc concentration, electric field intensity, and deposition time on the growth of CuPc film has been explored. The as-prepared CuPc films are made of numerous nanorods. The X-ray diffraction (XRD) spectra revealed that the CuPc films are the b phase and amorphous type on pristine and porous GaN, respectively. Moreover, the prototype devices were fabricated on the basis of the CuPc/ PGaN heterostructures. The devices exhibited excellent photodetector performance under ultraviolet (UV) light illumination. (C) 2016 Elsevier B.V. All rights reserved.