MOCVD를 이용한 비평면구조 기판에서의 GaN 션택적 성장특성연구

이재인; 금동화; 유지범; Jae-In Lee; Donghwa Kum; Ji-Beom Yoo

Korean Journal of Materials Research, Vol.9, No.3, 257-262, March, 1999

Export Citation

MOCVD를 이용한 비평면구조 기판에서의 GaN 션택적 성장특성연구

A Study on the Selective Area Growth of GaN on Non-Planar Substrate by MOCVD

이재인, 금동화¹, 유지범

성균관대학교 재료공학과
¹한국과학기술연구원 금속부

Jae-In Lee, Donghwa Kum¹, and Ji-Beom Yoo

Department of Materials Eng., Sungkyunk:wan University, 300 chunchun-dong, Jangan-gu, Suwon 440-746, Korea
¹Division of Metals, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea

초록

MOCVD를 이용하여 SiO2로 패턴된 GaN/sapphire 기판상에서 NH3 유량과 성장온도가 GaN 성장의 선택성과 성장 특성에 미치는 영향을 조사하였다. NH3유량을 500~1300sccm, 성장온도를 850~1060℃로 변화시켜 성장변수에 따른 영향을 주사전자현미경으로 관찰하였다. NH3 유량이 증가할수록 성장선택성이 향상되었으나 기판윈도우에서 성장되는 GaN 형상변화에는 큰 영향을 키치지 못하였다. 성장온도가 높을수록 GaN의 성장선택성이 향상됨이 관찰되었다. 패턴 모양을 원형, 선형, 방사선모양(선형 패턴을 30, 45° 로 회전)으로 제작하여 GaN 성장을 수행한 후 관찰한 결과 (1101)으로 이루어진 Hexagonal 피라밋 형상과 마스크층 위로의 측면성장을 얻을 수 있었으며, 성장조건에 따른 <1100>와 <1210>의 방향으로의 측면성장속도의 차이를 관찰할 수 있었다.

The selective area growth of GaN by metal organic chemical vapor deposition has been carried out on GaN/sapphire substrate using Si02 mask. We investgated the effect of growth parameters such as flow rate of NH3(500~1300sccm) and the growth temperature(950~1060℃) on the growth selectivity and characteristics of GaN using the Scanning Electron Microscopy(SEM). The selectivity of GaN improved as flow rate of NH3 and growth temperature increased. But the grown GaN shapes on the substrate windows was independent of the flow rate of NH3. On the pattern shapes such as circJe, stripe, and radiational pattern(rotate the stripe pattern by 30°, 45° ), we observed the hexagonal pyramid, the lateral over growth on the mask layer, and the difference of the lateral growth rate depending on growth condition

[References]

Zheleva TS, Nam OH, Bremser MD, Davis RF, Appl. Phys. Lett., 71, 2472 (1997)
Nam OH, Bremser MD, Ward BL, Nemanich RJ, Davis RF, Jpn. J. Appl. Phys., 36, L532 (1997)
Freitas JA, Nam OH, Zheleva TS, Davis RF, J. Cryst. Growth, 189/190, 92 (1998)
Akasaka T, Kobayashi Y, Ando S, Kobayashi N, Kumagai M, J. Cryst. Growth, 189/190, 72 (1998)
Matsushima H, Yamaguchi M, Hiramatsu K, Sawaki N, J. Cryst. Growth, 189/190, 78 (1998)
Beaumont B, Gibart P, Vaille M, Haffouz S, Nataf G, Bouille A, J. Cryst. Growth, 189/190, 97 (1998)
Kato Y, Kitamura S, Hiramatsu K, Sawaki N, J. Cryst. Growth, 144, 133 (1998)
Yamaguchi K, Ogasawara M, Okamoto K, J. Appl. Phys., 72(12), 5919 (1992)
Yamaguchi K, Okamoto K, Jpn. J. Appl. Phys., 32, 1523 (1993)
Nam OH, Zheleva TS, Bremser MD, Thomson DB, Davis RF, MRS. Symposium Proceedings, 482, 301 (1997)
Nagahara M, Miyoshi S, Yaguchi H, Onabe K, Shiraki Y, lto R, Jpn. J. Appl. Phys., 33, 694 (1994)
Fukui T, Ando S, Fukai YK, Appl. Phys. Lett., 57(12), 1209 (1990)

[1] Zheleva TS, Nam OH, Bremser MD, Davis RF, Appl. Phys. Lett., 71, 2472 (1997)

[2] Nam OH, Bremser MD, Ward BL, Nemanich RJ, Davis RF, Jpn. J. Appl. Phys., 36, L532 (1997)

[3] Freitas JA, Nam OH, Zheleva TS, Davis RF, J. Cryst. Growth, 189/190, 92 (1998)

[4] Akasaka T, Kobayashi Y, Ando S, Kobayashi N, Kumagai M, J. Cryst. Growth, 189/190, 72 (1998)

[5] Matsushima H, Yamaguchi M, Hiramatsu K, Sawaki N, J. Cryst. Growth, 189/190, 78 (1998)

[6] Beaumont B, Gibart P, Vaille M, Haffouz S, Nataf G, Bouille A, J. Cryst. Growth, 189/190, 97 (1998)

[7] Kato Y, Kitamura S, Hiramatsu K, Sawaki N, J. Cryst. Growth, 144, 133 (1998)

[8] Yamaguchi K, Ogasawara M, Okamoto K, J. Appl. Phys., 72(12), 5919 (1992)

[9] Yamaguchi K, Okamoto K, Jpn. J. Appl. Phys., 32, 1523 (1993)

[10] Nam OH, Zheleva TS, Bremser MD, Thomson DB, Davis RF, MRS. Symposium Proceedings, 482, 301 (1997)

[11] Nagahara M, Miyoshi S, Yaguchi H, Onabe K, Shiraki Y, lto R, Jpn. J. Appl. Phys., 33, 694 (1994)

[12] Fukui T, Ando S, Fukai YK, Appl. Phys. Lett., 57(12), 1209 (1990)