Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System

Woojin Lee; Atsuki Fukazawa; Yong-Ho Choa

Korean Journal of Materials Research, Vol.26, No.9, 455-459, September, 2016

DOI10.3740/MRSK.2016.26.9.455 Export Citation

Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System

Woojin Lee, Atsuki Fukazawa¹, and Yong-Ho Choa^{2, †}

Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD, Samsungjeonja-ro 1, Hwaseong, Gyeonggi-do 18448, Republic of Korea
¹R&D Process Development, ASM Japan K.K., 23-1, 6-chome, Nagayama, Tama-shi, Tokyo 206-0025, Japan
²Functional Nano-Materials Research Lab, Department of Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangrok-gu, Ansan, Gyeonggi-do 15588, Republic of Korea

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The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, (CH3)2Si(OCH3)2, and CxHyOz by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

Keywords:gap fill;f-cvd;low-k;trench pattern;microelectronic

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[1] Borhr M, Elmansy YA, IEEE Trans. Electron Devices, 45, 620 (1998)

[2] The International Technology Roadmap for Semiconductors. 2004 Update.

[3] Wu ZC, Shiung ZW, Chiang CC, Wu WH, Chen MC, Jeng SM, Chang W, Chou PF, Jang SM, Yu CH, Liang MS, J. Electrochem. Soc., 148(6), F115 (2001)

[4] Lee GY, Edelstein DC, Conti R, Cote W, Low KS, Dobuzinsky D, Feng G, Dev K, Wrschka P, Shafer P, Ramachandran R, Simpson A, Liniger E, Simonyi E, Dalton T, Spooner T, Jahnes C, Kaltalioglu E, Grill A, Advanced Metallization Conference, SanDiego, 3-5 (2000).

[5] Grill A, Patel V, Mater. Res. Soc. Symp. Proc., 612, D2.9.1 (2000)

[6] Lee HJ, Goo JS, Kim SH, Hong JG, Lee HD, Kang HH, Lee SI, Lee MY, Jpn. J. Appl. Phys., 39, 3924 (2000)

[7] Belot V, Corriu R, Leclercq D, Mutin PH, Vioux A, Chem. Mater., 3, 127 (1991)

[8] Hozumi A, Sekoguchi H, Takai O, J. Electrochem. Soc., 144(8), 2824 (1997)

[9] Pai PG, Chao SS, Takagi Y, Lucovski G, J. Vac. Sci. Technol. A, 4, 689 (1986)

[10] Ritter E, Opt. Acta, 9, 197 (1962)

[11] Shim KC, Lee HB, Kwon OK, Park HS, Koh W, Kang SW, J. Electrochem. Soc., 149(2), G109 (2002)