Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Choi J; Park S; Lee J; Hong K; Kim DH; Moon CW; Park GD; Suh J; Hwang J; Kim SY; Jung HS; Park NG; Han S; Nam KT; Jang HW

Advanced Materials, Vol.28, No.31, 6562-6562, 2016

DOI10.1002/adma.201600859 Export Citation

Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Choi J, Park S, Lee J, Hong K, Kim DH, Moon CW, Park GD, Suh J, Hwang J, Kim SY, Jung HS, Park NG, Han S, Nam KT, Jang HW

Organolead halide perovskites are used for low-operating-voltage multilevel resistive switching. Ag/CH3NH3PbI3/Pt cells exhibit electroforming-free resistive switching at an electric field of 3.25 x 10(3) V cm(-1) for four distinguishable ON-state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low-electric-field resistive switching via filament formation and annihilation.