Polycrystalline 0.67Bi(1.05)FeO(3)-0.33BaTiO(3) (BF33BT) lead-free piezoelectric thin film is fabricated on Pt(111)/Ti/SiO2/Si(100) substrate by using pulsed laser deposition technique. The remnant polarization (2P(r)) and coercive field (2E(C)) observed from polarization hysteresis (P-E) loop are 18 mu C/cm(2) and 208 kV/cm, respectively. The local piezoelectric constant (d(33,PFM)) of BF33BT thin film is 92.5 pm/V which is as high as lead-based piezoelectric thin film results. From the temperature dependent dielectric constant result, the Curie temperature is 405 degrees C. These results show that BF33BT thin film is a promising candidate for lead-free piezoelectric nano- and micro-devices with high Curie temperature. (C) 2016 Published by Elsevier B.V.