Conductivity, capacitance, and the low-frequency noise in structures with Ge nanoclusters grown on oxidized Si(001) have been investigated for the temperature range of 120-290 K and frequencies from 1 kHz to 1 MHz in co-planar geometry. The Mott's variable range hopping through quasi-band of localized states at the Fermi level of nanoclusters and their interfaces was found to be the dominant transport mechanism in the surface conductivity channel. The quasi-band width was found to be about 110 meV, while the middle is located at E-v + 140 meV. The maximum of reduced conductivity and capacitance were observed under conditions when Fermi level is in the middle of this band. A significant increase of the 1/f noise level with decreasing temperature found for the structures studied was ascribed to accompany hopping transport of charge carriers within the quasi-band with a high density of localized states.