Preparation of indium tin oxide powder from low-grade metallic indium and tin

Su-Jin Koo; Chang-sik Ju

Korean Journal of Chemical Engineering, Vol.33, No.12, 3511-3515, December, 2016

DOI10.1007/s11814-016-0174-7 Export Citation

Preparation of indium tin oxide powder from low-grade metallic indium and tin

Su-Jin Koo, and Chang-sik Ju^{1, †}

Institute of Defense Science & Technology, Pukyoung National University, 365, Sinseon-ro, Nam-gu, Busan 48547, Korea
¹Department of Chemical Engineering, Pukyoung National University, 365, Sinseon-ro, Nam-gu, Busan 48547, Korea

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Preparation of indium-tin oxide(ITO) powder by oxalic acid from metallic indium and tin was investigated. The intermediate(indium-tin oxalate salt) was formerly prepared at various conditions, and thermal decomposition was followed to obtain ITO powder for ITO target. Optimum conditions for preparation of the intermediate were oxalic acid concentration 2.0M, pH 8.0, reaction temperature 80 ℃ and reaction time 6 hours. The purity of the intermediate could be increased by recrystallization up to 99.99% (4 N). The phase transition temperature of the intermediate to ITO powder was analyzed by TGA. The purity, crystal structure and particle shape of ITO powder were examined by ICP-OES, XRD and TEM, respectively. ITO powder obtained was spherical, whose size was 20-50 nm.

Keywords:Indium-tin Oxalate Salt;Indium-tin Oxide (ITO);Oxalic Acid;Indium Metal;Tin Metal

[References]

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[Referenced By]

[1] Lee SS, Lee NR, Kim KI, Hong TW, Clean Technol., 18(1), 69 (2012)

[2] Minami T, Thin Solid Films, 516(17), 5822 (2008)

[3] Park SJ, Roh YM, Lee SG, Kim Y, Shin CH, Ahn JW, RIST, 21, 352 (2007)

[4] Park KS, Cho MH, Jin SJ, Song CH, Nahm KS, Korean J. Chem. Eng., 22(1), 46 (2005)

[5] Pansanga K, Mekasuwandumrong O, Panpranot J, Praserthdam P, Korean J. Chem. Eng., 24(3), 397 (2007)

[6] Nam WS, Han GY, Korean J. Chem. Eng., 20(6), 1149 (2003)

[7] Tsuyoshj F, Junichi T, Kohei KK, J. Ceram. Soc. Jpn., 102, 200 (1994)

[8] Radhouane BHT, Takatuki B, Yutaka O, Yasutaka T, J. Appl. Phys., 82, 865 (1997)

[9] Radhouane BHT, Takatuki B, Yutaka O, Yasutaka T, J. Appl. Phys., 83, 2631 (1997)

[10] David CP, Whitson T, Janiac D, Beresford R, Cleva OY, J. Appl. Phys., 85, 8445 (1999)

[11] Sung MH, Kim WS, Kim JS, HWAHAK KONGHAK, 36(4), 510 (1998)

[12] Coronado E, Marti-Gastaldo C, Galan-Mascaros JR, Cavallini M, J. Am. Chem. Soc., 132(15), 5456 (2010)

[13] Prasad PA, Neeraj S, Natarajan S, Rao CNR, Chem. Commun., 1251 (2000)

[14] Sihai Y, Guobao L, Shujian T, Fuhui L, Jianhua L, J. Solid State Chem., 3703 (2005)

[15] Kenneth NH, J. Kor. Inst. Reso. Recy., 10, 3 (2001)

[16] Lee YI, Choa YH, Korean J. Mater. Res., 22(4), 174 (2012)