High-quality InxGa1-xAs layers with indium composition between 0.46 and 0.50 have been grown in a 300 mm industrial MOVPE reactor using <= 1 mu m thin InxGa1-xAs buffers on 2" GaAs substrates. Aggressive grading of 3.7 to 3.8% misfit/gm, fast growth rates in the range of 0.2-2.2 nm/s and low growth temperatures of 530 degrees C and 450 degrees C were used. AFM reveals a significant difference in root mean square surface roughness of 3.6 nm (530 degrees C) versus 15.5 nm (450 degrees C). Cross-section TEM analysis shows that for both temperatures threading dislocations are effectively confined to the buffer region. However, at 450 degrees C phase separation is observed in the upper part of the structure. From plan-view TEM threading dislocation densities as low as 1 x 10(5) cm(-2) and 4.5 x 10(5) cm(-2) are estimated for growth at 530 degrees C and 450 degrees C, respectively. (C) 2016 Elsevier B.V. All rights reserved.