Accurate and rapid threading dislocation density (TDD) characterization of III-V photovoltaic materials using electron channeling contrast imaging (ECCI) is demonstrated. TDDs measured using ECCI showed close agreement with those from electron beam-induced current mapping (EBIC) and defect selective etching (DSE). ECCI is shown to be well-suited for measuring TDD values over a range of similar to 5 x 10(6) -5 x 10(8) cm(-2). ECCI can distinguish individual dislocations in clusters closer than 0.2 mu m, highlighting its excellent spatial resolution compared to DSE and EBIC. Taken together, ECCI is shown to be a versatile and complementary method to rapidly quantify TDD in III-V solar cells. (C) 2016 Elsevier B.V. All rights reserved.