High-quality Yttrium iron garnet ( YIG) films with crack-free surface and improved magnetic performance were grown on platinum ( Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm(3), which was the 88% theoretical value of YIG single crystal. The effects of annealing condition were also discussed. When annealed at 750 degrees C for 1 h, YIG films showed a very small coercive field of 12 Oe and the peak-to-peak ferromagnetic resonance linewidth can be as low as 95 Oe at 9.10 GHz. The results demonstrated that YIG films prepared on Pt-buffered Si substrates can be beneficial to the application of YIG films to integrated devices.