Manganese-doped copper interconnects are known to provide superior electromigration resistance and thus are attractive for further downscaled interconnect metallization in future high-performance microprocessors. In the present study, we report on Cu-Mn (copper manganese) fabricated by electroless deposition. Using tartrate-complexed electrolytes, we achieved electroless plating of Cu-Mn with (4.0 +/- 0.5) at.% Mn. Electrochemical studies determined the most likely oxidation state of the Mn in the deposit to be +2. This suggests incorporation of MnO or Mn(OH)(2) during deposition. After heat-treatment of the Cu-Mn films, X-ray photoelectron spectroscopy indicated Mn segregation at the film surface. Moreover, transmission electron microscopy demonstrates Mn segregation at Cu-substrate interface. These observations suggest that Mn transport in electroless-deposited Cu-Mn can be exploited to engineer future interconnects with improved reliability and 'self-forming' barrier properties. Challenges to be addressed in future studies are highlighted. (C) 2016 The Electrochemical Society. All rights reserved.