This work demonstrates low-ohmic electrical contacting of phosphorus- and boron-doped surfaces (textured and passivated) with maximum dopant concentrations of only N-max approximate to 2.10(19) cm(-3) by screen printed and fired metallization. The achieved results using commercially available metallization pastes allow for a substantial extension of the limits in which screen-printed and fired metallization can be applied for solar cell fabrication. Despite the very low N-max, the investigations reveal reasonably low specific contact resistances of rho(C) =(8 +/- 3) m Omega cm(2) for a silver paste on alkaline textured, phosphorus doped, and SiNx passivated surfaces, and rho(C)=(3.7 +/- 0.7) m Omega cm(2) for a silver aluminum paste on alkaline textured, boron-doped, and Al2O3/SiNx passivated surfaces. (C) 2016 Elsevier B.V. All rights reserved.