Alkali solutions are not suitable for texturing multi-crystalline silicon (mc-Si) wafer due to the anisotropic etching. In this study, a two-step alkali-etch process is developed to form a flat surface on the wafer, which can be quickly and nearly isotropically etched by immersion in a sodium hydroxide solution, followed by a sodium hydroxide-sodium hypochlorite solution. The etching process leads to the formation of homogenous nanostructure, thereby improving the cell's repeatability and performance by simultaneously increasing its short-circuit current and open-circuit voltage. (C) 2016 Elsevier B.V. All rights reserved.