Leakage current contribution to the power consumption cannot be ignored in the sub-100 nm technology. Drastic reduction of channel length of the modern highly scaled device enhances the leakage current significantly. Two novel 8T-SRAM cells low-leakage-current SRAM cell (LLC-SRAM cell) and low-leakage-current high-threshold-voltage SRAM cell (LLC-HVT SRAM cell) are proposed to offer high energy efficiency. The cell performances are compared with 8T NC-SRAM cell and 6T-SRAM cell. The proposed cells significantly reduce the overall power consumption. The cell array simulations are performed in spectre with a general purpose 45 nm technology library. The short-circuit current reduction during state transition helps to decrease the dynamic power consumption. In standby mode the cell operates at a voltage lower than the supply which brings down the leakage current and hence leakage power. Besides the energy prospective the stability, speed and writ-ability analysis are also performed in this work. (C) 2016 Elsevier Ltd. All rights reserved.