The epitaxial La(0.7)Sr(0.3)Mno(3)/BaTiO3 (LSMO/BTO) layered heterostructures were grown onto (001) oriented LaAlO3 single-crystal substrate by pulsed laser deposition. Temperature dependence of the magnetoelectric (ME) voltage coefficient (alpha(E)) was studied for the heterostructures over temperature range of -20-85 degrees C (253.15-358.15 K). The values of alpha(E) for all of the samples exhibit a monotonous decreasing tendency with increasing temperature. Moreover, the variation in ME voltage coefficient as a function of temperature was found to be significantly dependent on the volume fraction of BTO layer. Our results showed that maximum number of the volume fraction of BTO layer can provide more stable ME voltage coefficient in wide temperature range, due to the competition of the effects of temperature influenced piezoelectricity, magnetostriction, and electrical transport property of the constituents. This finding could provide an available method for promote miniaturization of the ME heterostructure devices in view of temperature stability. (C) 2016 Elsevier B.V. All rights reserved.