비수계 나노 사이즈 실리카 분산을 통한 고투과율·저유전 박막 제조 응용

이창희; 임용찬; 배진영; Changhee Lee; Yongchan Lim; Jin-Young Bae

Polymer(Korea), Vol.41, No.1, 104-111, January, 2017

DOI10.7317/pk.2017.41.1.104 Export Citation

비수계 나노 사이즈 실리카 분산을 통한 고투과율·저유전 박막 제조 응용

Preparation of High Transparent and Low Dielectric Constants Resist by Non-aqueous Nano-sized Silica Dispersion for Fabrication of Thin Film

이창희, 임용찬, 배진영^†

성균관대학교 고분자공학과

Changhee Lee, Yongchan Lim, and Jin-Young Bae^†

Department of Polymer Science and Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 16419, Korea

E-mail:

초록

본 연구에서는 유기 시스템에 적합한 실리카 분산액을 나노 사이즈의 fumed silica를 기반으로 분산제 및 용매를 선택하여 적합한 process를 도입하여 균일한 크기의 입자를 분산, 제조하였다. 실리카 분산액의 안정성을 고려하여 우레탄계 및 실리콘계 분산제를 사용하였고, 그에 알맞은 용매를 선택적으로 단일 혹은 혼합하여 사용하였다. 실리카 분산체와 혼화성을 가지며 실리카 입자의 응집을 야기하지 않는 아크릴계 바인더를 제조하기 위하여 다양한 단량체를 사용하여 아크릴 바인더를 합성하였고, 실리카 분산체와의 혼합과정 후 혼합액의 안정성을 평가하였다. 우선적으로 TFT-LCD용 레지스트가 기본적으로 요구하는 광학적 특성에 기반하여 다양한 배합비율의 혼합액을 제조 하였고, 제조된 혼합액의 투과도를 확인하였으며, 마지막으로 전기적 특성을 확인하였다.

In this study, we prepared silica millbase in organic solvent system and acrylic-based binder to obtain an organic insulating film with high transmittance and low dielectric constant. Appropriate dispersion medium was chosen, type of dispersant and amount of dispersant was determined for well-dispersed silica millbase, to prevent silica particles from agglomerating, and a suitable acrylic-base binder was designed and synthesized. The organic insulating film had transmittance of at least about 90%, and had a dielectric constant of less than 2. The organic insulating film has potential application in TFT-LCD as well as other types of display.

Keywords:silica particle;dispersants;silica dispersion;acrylic binder;insulating thin film

[References]

Kim SC, Kim YS, Yu EKH, Kanicki J, Solid-State Electron., 111, 67 (2015)
Lee BD, Park YH, Hwang YT, Oh W, Yoon J, Ree M, Nat. Mater., 4(2), 147 (2005)
Lee HJ, Lin EK, Wang H, Wu WL, Chen W, Moyer ES, Chem. Mater., 14, 1845 (2002)
Chang TS, Chang TC, Liu PT, Chang TS, Tu CH, Yeh FS, IEEE Electr. Device Lett., 27, 902 (2006)
Maier G, Prog. Polym. Sci, 26, 3 (2001)
Maex K, Baklanov MR, Shamiryan D, Lacopi F, Brongersma SH, Yanovitskaya ZS, J. Appl. Phys., 93, 8793 (2003)
Miller RD, Science, 286, 421 (1999)
Cedeno CC, Seekamp J, Kam AP, Hoffmann T, Zankovych S, Torres CMS, Menozzi C, Cavallini M, Murgia M, Ruani G, Biscarini F, Behl M, Zentel R, Ahopelto J, Microelectron. Eng., 25, 61 (2002)
Hong WS, Jun KW, Choi JH, Hwang BK, Chung K, IEEE Electr. Device Lett., 25, 381 (2004)
Krishnamoorthy A, Spear R, Gebrebrhan A, Stifanos M, Bien H, Lowe M, Yellowaga D, Smith P, O'Rourke S, Loy D, Dailey J, Marrs M, Ageno S, SID Symposium Digest of Technical Papers, 39, 140 (2008)
Leao TP, Perfect E, Tyner JS, ASABE, 58, 83 (2015)

[1] Kim SC, Kim YS, Yu EKH, Kanicki J, Solid-State Electron., 111, 67 (2015)

[2] Lee BD, Park YH, Hwang YT, Oh W, Yoon J, Ree M, Nat. Mater., 4(2), 147 (2005)

[3] Lee HJ, Lin EK, Wang H, Wu WL, Chen W, Moyer ES, Chem. Mater., 14, 1845 (2002)

[4] Chang TS, Chang TC, Liu PT, Chang TS, Tu CH, Yeh FS, IEEE Electr. Device Lett., 27, 902 (2006)

[5] Maier G, Prog. Polym. Sci, 26, 3 (2001)

[6] Maex K, Baklanov MR, Shamiryan D, Lacopi F, Brongersma SH, Yanovitskaya ZS, J. Appl. Phys., 93, 8793 (2003)

[7] Miller RD, Science, 286, 421 (1999)

[8] Cedeno CC, Seekamp J, Kam AP, Hoffmann T, Zankovych S, Torres CMS, Menozzi C, Cavallini M, Murgia M, Ruani G, Biscarini F, Behl M, Zentel R, Ahopelto J, Microelectron. Eng., 25, 61 (2002)

[9] Hong WS, Jun KW, Choi JH, Hwang BK, Chung K, IEEE Electr. Device Lett., 25, 381 (2004)

[10] Krishnamoorthy A, Spear R, Gebrebrhan A, Stifanos M, Bien H, Lowe M, Yellowaga D, Smith P, O'Rourke S, Loy D, Dailey J, Marrs M, Ageno S, SID Symposium Digest of Technical Papers, 39, 140 (2008)

[11] Leao TP, Perfect E, Tyner JS, ASABE, 58, 83 (2015)