절연성 TaNx 박막의 전기전도 기구

류성연; 최병준; Sungyeon Ryu; Byung Joon Choi

Korean Journal of Materials Research, Vol.27, No.1, 32-38, January, 2017

DOI10.3740/MRSK.2017.27.1.32 Export Citation

절연성 TaNx 박막의 전기전도 기구

Electrical Conduction Mechanism in the Insulating TaNx Film

류성연, 최병준^†

서울과학기술대학교 신소재공학과

Sungyeon Ryu, and Byung Joon Choi^†

Department of Materials Science and Engineering, Seoul National University of Science and Technology, Korea

E-mail:

Insulating TaNx films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and N2+H2 mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a Pt/TaNx/Pt stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the Poole-Frenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick TaNx films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution (ON) and interstitial nitrogen (Ni) in the TaNx films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of TaNx film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

Keywords:TaN film;electrical transport;Poole-Frenkel emission;plasma enhanced atomic layer deposition

[References]

Chang CC, Jeng JS, Chen JS, Thin Solid Films, 413(1-2), 46 (2002)
Kwon J, Chabal YJ, Appl. Phys. Lett., 96, 2008 (2010)
Zhao Y, Lu G, Phys. Res. B, 79, 214104 (2009)
Kim SM, Lee GR, Lee JJ, Jpn. J. Appl. Phys., 47, 6953 (2008)
Nakao SI, Numata M, Ohmi T, Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., 38, 2401 (1999)
Kim K, Choi J, in Proceedings of Non-Volatile Semiconductor Memory Workshop (Monterey, CA, February 2006) (IEEE, USA, 2006) p.9.
Yu L, Stampfl C, Marshall D, Eshrich T, Narayanan V, Rowell J, Newman N, Freeman A, Phys. Rev. B, 65, 245110 (2002)
Malmros A, Andersson K, Rorsman N, Thin Solid Films, 520(6), 2162 (2012)
Engel A, Aeschbacher A, Inderbitzin K, Schilling A, Il’In K, Hofherr M, Siegel M, Semenov A, Hubers HW, Appl. Phys. Lett., 100, 1 (2012)
Choi BJ, Zhang JM, Norris K, Gibson G, Kim KM, Jackson W, Zhang MXM, Li ZY, Yang JJ, Williams RS, Adv. Mater., 28(2), 356 (2016)
Park TH, Song SJ, Kim HJ, Kim SG, Chung S, Kim BY, Lee KJ, Kim KM, Choi BJ, Hwang CS, Phys. Status Solidi Rapid Res. Lett., 9, 362 (2015)
Park TH, Song SJ, Kim HJ, Kim SG, Chung S, Kim BY, Lee KJ, Kim KM, Choi BJ, Hwang CS, Sci. Rep., 5, 15965 (2015)
Choi BJ, Torrezan AC, Strachan JP, Kotula PG, Lohn AJ, Marinella MJ, Li ZY, Williams RS, Yang JJ, Adv. Funct. Mater., 26(29), 5290 (2016)
Chiu F, Adv. Mater. Sci. Eng., 2014, 578168 (2014)
Somani S, Mukhopadhyay A, Musgrave C, J. Phys. Chem. C, 115, 11507 (2011)
Fang ZW, Aspinall HC, Odedra R, Potter RJ, J. Cryst. Growth, 331(1), 33 (2011)
Burton BB, Lavoie AR, George SM, J. Electrochem. Soc., 155(7), D508 (2008)
Ritala M, Kalsi P, Riihela D, Kukli K, Leskela M, Jokinen J, Chem. Mater., 11, 1712 (1999)
Kim H, Kellock AJ, Rossnagel SM, J. Appl. Phys., 92, 7080 (2002)
Chung HS, Kwon JD, Kang SW, J. Electrochem. Soc., 153(11), C751 (2006)
Fang CM, Orhan E, de Wijs GA, Hintzen HT, de Groot RA, Marchand R, Saillard JY, de With G, J. Mater. Chem., 11, 1248 (2001)

[1] Chang CC, Jeng JS, Chen JS, Thin Solid Films, 413(1-2), 46 (2002)

[2] Kwon J, Chabal YJ, Appl. Phys. Lett., 96, 2008 (2010)

[3] Zhao Y, Lu G, Phys. Res. B, 79, 214104 (2009)

[4] Kim SM, Lee GR, Lee JJ, Jpn. J. Appl. Phys., 47, 6953 (2008)

[5] Nakao SI, Numata M, Ohmi T, Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., 38, 2401 (1999)

[6] Kim K, Choi J, in Proceedings of Non-Volatile Semiconductor Memory Workshop (Monterey, CA, February 2006) (IEEE, USA, 2006) p.9.

[7] Yu L, Stampfl C, Marshall D, Eshrich T, Narayanan V, Rowell J, Newman N, Freeman A, Phys. Rev. B, 65, 245110 (2002)

[8] Malmros A, Andersson K, Rorsman N, Thin Solid Films, 520(6), 2162 (2012)

[9] Engel A, Aeschbacher A, Inderbitzin K, Schilling A, Il’In K, Hofherr M, Siegel M, Semenov A, Hubers HW, Appl. Phys. Lett., 100, 1 (2012)

[10] Choi BJ, Zhang JM, Norris K, Gibson G, Kim KM, Jackson W, Zhang MXM, Li ZY, Yang JJ, Williams RS, Adv. Mater., 28(2), 356 (2016)

[11] Park TH, Song SJ, Kim HJ, Kim SG, Chung S, Kim BY, Lee KJ, Kim KM, Choi BJ, Hwang CS, Phys. Status Solidi Rapid Res. Lett., 9, 362 (2015)

[12] Park TH, Song SJ, Kim HJ, Kim SG, Chung S, Kim BY, Lee KJ, Kim KM, Choi BJ, Hwang CS, Sci. Rep., 5, 15965 (2015)

[13] Choi BJ, Torrezan AC, Strachan JP, Kotula PG, Lohn AJ, Marinella MJ, Li ZY, Williams RS, Yang JJ, Adv. Funct. Mater., 26(29), 5290 (2016)

[14] Chiu F, Adv. Mater. Sci. Eng., 2014, 578168 (2014)

[15] Somani S, Mukhopadhyay A, Musgrave C, J. Phys. Chem. C, 115, 11507 (2011)

[16] Fang ZW, Aspinall HC, Odedra R, Potter RJ, J. Cryst. Growth, 331(1), 33 (2011)

[17] Burton BB, Lavoie AR, George SM, J. Electrochem. Soc., 155(7), D508 (2008)

[18] Ritala M, Kalsi P, Riihela D, Kukli K, Leskela M, Jokinen J, Chem. Mater., 11, 1712 (1999)

[19] Kim H, Kellock AJ, Rossnagel SM, J. Appl. Phys., 92, 7080 (2002)

[20] Chung HS, Kwon JD, Kang SW, J. Electrochem. Soc., 153(11), C751 (2006)

[21] Fang CM, Orhan E, de Wijs GA, Hintzen HT, de Groot RA, Marchand R, Saillard JY, de With G, J. Mater. Chem., 11, 1248 (2001)