내부 광전자방출 분광법을 이용한 Pt/HfO2/p-Si Metal-Insulator-Semiconductor 커패시터의 쇼트키 배리어 분석

이상연; 서형탁; Sang Yeon Lee; Hyungtak Seo

Korean Journal of Materials Research, Vol.27, No.1, 48-52, January, 2017

DOI10.3740/MRSK.2017.27.1.48 Export Citation

내부 광전자방출 분광법을 이용한 Pt/HfO2/p-Si Metal-Insulator-Semiconductor 커패시터의 쇼트키 배리어 분석

Characterization of the Schottky Barrier Height of the Pt/HfO2/p-type Si MIS Capacitor by Internal Photoemission Spectroscopy

이상연¹, 서형탁^{1, 2, †}

¹아주대학교 에너지 시스템학과
²아주대학교 신소재 공학과

Sang Yeon Lee¹, and Hyungtak Seo^{1, 2, †}

¹Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
²Department of Materials Science & Engineering, Ajou University, Suwon 16499, Republic of Korea

E-mail:

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/HfO2/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of HfO2. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/HfO2/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/HfO2/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

Keywords:internal photoemission spectorscopy;HfO2;capacitor;MOS

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[1] Jegert G, Kersch A, Weinreich W, Lugli P, J. Appl. Phys., 109, 014504 (2011)

[2] Kim SK, Lee SW, Han JH, Lee B, Han S, Hwang CS, Adv. Funct. Mater., 20(18), 2989 (2010)

[3] Cho HJ, Kim YD, Park DS, Lee E, Park CH, Jang JS, Lee KB, Kim HW, Ki YJ, Han K, Song YW, Solid-State Electron., 51(11-12), 1529 (2007)

[4] Wu J, Register LF, Rosenbaum E, Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International, 389, (1999).

[5] Ho Jin, K. Young Dae, P. Dong Su, L. Euna, P. Cheol Hwan, J. Jun Soo, L. Keum Bum, K. Hai Won, C. Soo Jin, K. Young Jong, H. Il Keun and S. Yong Wook, Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European, 146 (2006).

[6] Lee SY, Chang J, Kim Y, Lim H, Jeon H, Seo H, Appl. Phys. Lett., 105, 201603 (2014)

[7] Gerald L, Hyungtak S, Sanghyun L, Leslie BF, Marc DU, Jan L, Pat L, Gennadi B, Jpn. J. Appl. Phys., 46, 1899 (2007)

[8] Afanas'ev VV, Internal photoemission spectroscopy : principles and applications. Elsevier: (2008).

[9] Afanas'ev VV, Stesmans A, J. Appl. Phys., 102, 081301 (2007)

[10] Gopel W, Anderson JA, Frankel D, Jaehnig M, Phillips K, Schafer JA, Rocker G, Surf. Sci., 139, 333 (1984)

[11] Nguyen NV, Kirillov OA, Suehle JS, Thin Solid Films, 519(9), 2811 (2011)

[12] Nguyen NV, Kirillov O, Xiong HD, Suehle JS, AIP Conference Proceedings, 931, 308 (2007)

[13] Haowei Z, Bin G, Shimeng Y, Lin L, Lang Z, Bing S, Lifeng L, Xiaoyan L, Jing L, Ruqi H, Jinfeng K, Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on, 1, (2009).

[14] Afanas'ev VV, Houssa M, Stesmans A, Heyns MM, J. Appl. Phys., 91, 3079 (2002)

[15] Chan EY, Card HC, Teich MC, Quantum Electronics, IEEE Journal of, 16, 373 (1980)

[16] Register LF, Rosenbaum E, Yang K, Appl. Phys. Lett., 74, 457 (1999)

[17] Robertson J, J. Vac. Sci. Technol. B, 18(3), 1785 (2000)

[18] Furukawa S, Miyasato T, Phys. Rev. B, 38, 5726 (1988)