Ferroelectric Control of Organic/Ferromagnetic Spinterface

Liang SH; Yang HX; Yang HW; Tao BS; Djeffal A; Chshiev M; Huang WC; Li XG; Ferri A; Desfeux R; Mangin S; Lacour D; Hehn M; Copie O; Dumesnil K; Lu Y

Advanced Materials, Vol.28, No.46, 10204-10210, 2016

DOI10.1002/adma.201603638 Export Citation

Ferroelectric Control of Organic/Ferromagnetic Spinterface

Liang SH, Yang HX, Yang HW, Tao BS, Djeffal A, Chshiev M, Huang WC, Li XG, Ferri A, Desfeux R, Mangin S, Lacour D, Hehn M, Copie O, Dumesnil K, Lu Y

Organic multiferroic tunnel junctions based on La0.6Sr0.4MnO3/poly(vinylidene fluoride) (PVDF)/Co structures are fabricated. The tunneling magneto-resistance sign can be changed by electrically switching the ferroelectric polarization of PVDF barrier. It is demonstrated that the spin-polarization of the PVDF/Co spinterface can be actively controlled by tuning the ferroelectric polarization of PVDF. This study opens new functionality in controlling the injection of spin polarization into organic materials via the ferroelectric polarization of the barrier.