Here we report on the growth and characterization of beta-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk beta-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8 mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FVVHM values of similar to 46 ''. Young's modulus, shear modulus and hardness of the beta-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline beta-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a plane sapphire substrates where predominantly (111) oriented films were obtained. (C) 2016 Published by Elsevier B.V.