Inserting ultra-thin Ta films into a NiO resistive switching device enabled the achievement of an ultra-high ON/OFF ratio in the order of 10(6) and a 4-order higher resistance than normal binary oxide resistive random access memory device. Observations confirmed that the interface played an important role in controlling resistive switching properties and the microanalysis revealed the oxygen diffused into the Ta layer, serving as an oxygen scavenging effect. Based on the achieving high ON/OFF ratio, a multi-storage device with five stable resistive states was fabricated. The storage density has increased exponentially through this protocol compared with the traditional binary storage.