The Bi0.92-x Ho0.08Sr (x) Fe0.97Mn0.03O3(BHSr (x) FMO) thin films were deposited on FTO/glass substrates by the sol-gel method. The structure, surface morphologies, and electric properties of the thin films were investigated. The results show that the structure of BHSr (x) FMO thin films transformed from rhombohedral R3c:H to rhombohedral R3m:R when doped with the Sr2+ ions. When the ferroelectric domain structure of the BHSr (x) FMO(x = 0.00-0.04) thin films is converted from ferroelectric phase and antiferroelectric phase to ferroelectric phase, the coercive field (E (c)) increased. This change occurs when the defect dipole of of BHSr (x) FMO thin films increased, which clamps the domain wall motion and changes the directions of spontaneous polarization. In an electric field of 536 kV/cm, the 2P (r) and 2E (c) of BHSr3FMO thin film are 81.9 mu C/cm(2) and 524 kV/cm, respectively. In the magnetic field of 8000 Oe, the magnetization of the BHSr3FMO thin film is 8.34 emu/cm(3). The BHSr3FMO thin film shows the great multiferroic properties, which are mainly connected with the rhombohedral structure of R3c:H (51%)/R3m:R(49%) space groups at morphotropic phase boundary.