In this study, a simple and novel oxide-nanoparticles-based process was applied to prepare Cu2FeSnS4 (CITS) thin films. Firstly, the low cost and naturally abundant oxides (e.g. CuO, Fe2O3 and SnO2) were coated on the glass substrate. Secondly, CITS thin films were grown through the sulfurization of oxides precursors in a low toxic sulfur atmosphere. To investigate the phase transformation during sulfurization, the different annealing temperatures were used. It was found that the intermediate phase Cu3SnS4 and Cu2Sn3S7 existed during the CITS growth. Finally, the phase-pure CITS films with large grains were obtained when the sulfurization temperature increased to 580 degrees C. Furthermore, an obvious photoelectric response of CITS thin film is displayed, which suggests its potential application as one kind of low cost solar absorber materials. (C) 2016 Elsevier B.V. All rights reserved.