In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the experimental basic analog parameters such as transconductance (gm), output conductance (g(D)) and intrinsic voltage gain (A(V)). Although the Line-TFETs present worse A(V) than the point-TFETs, when they are compared with MOSFET technology, the line-TFET shows a much better intrinsic voltage gain than both MOSFET architectures (FinFET and GAA). Besides the A(V), the highest on-state current was obtained for Line-TFETs when compared with other two TFET architectures, which leads to a good compromise for analog application. (C) 2016 Elsevier Ltd. All rights reserved.