The transfer characteristic at room temperature of FinFETs processed for sub-10 nm technologies could always be explained by solving Poisson equation throughout the channel - dielectric interface. Various methods for the MOSFET parameters estimation are proposed in the literature. In this paper, the electrical parameters extraction technique based on the Y-function methodology is reminded. Low frequency noise is presented considering three major noise sources: 1/f noise associated to carrier trapping-detrapping in the gate oxide, channel carrier mobility fluctuations and generation recombination noise related to traps located in the depletion zone of the device. Theory and methodology in order to identify the 1/f noise mechanism and to have information of the process induced traps in the silicon film using the noise spectroscopy technique are revisited. (C) 2016 Elsevier Ltd. All rights reserved.