Low frequency noise measurements are used as a non-destructive diagnostic tool in order to evaluate the quality of the gate oxide and the silicon film of sub-10 nm triple-gate Silicon-on-Insulator (SOI) FinFETs. It was found that the carrier number fluctuations explain the 1/f noise in moderate inversion for n- and p-FinFETs, which allows estimating the gate oxide trap densities. The noise spectroscopy with respect to temperature (study of the generation-recombination noise) led to the identification of the traps located in the transistors silicon film. (C) 2016 Elsevier Ltd. All rights reserved.