습식 산화법으로 성장된 산화구리입자를 이용한 방열 컴파운드 제조 및 특성 연구

이동우; 엄창현; 주제욱; Dong Woo Lee; Chang Hyun Um; Jae Uk Chu

Korean Journal of Materials Research, Vol.27, No.4, 221-228, April, 2017

DOI10.3740/MRSK.2017.27.4.221 Export Citation

습식 산화법으로 성장된 산화구리입자를 이용한 방열 컴파운드 제조 및 특성 연구

Characterizations of Thermal Compound Using CuO Particles Grown by Wet Oxidation Method

이동우, 엄창현, 주제욱^†

(주) 영일 프레시젼

Dong Woo Lee, Chang Hyun Um, and Jae Uk Chu^†

Research & Development Institute, Youngyiel Precision Co., Ltd., 13 Beoman-ro 9il, Geumcheon-gu, Seoul 08587, Republic of Korea

E-mail:

Various morphologies of copper oxide (CuO) have been considered to be of both fundamental and practical importance in the field of electronic materials. In this study, using Cu (0.1 μm and 7 μm) particles, flake-type CuO particles were grown via a wet oxidation method for 5min and 60min at 75 °C. Using the prepared CuO, AlN, and silicone base as reagents, thermal interface material (TIM) compounds were synthesized using a high speed paste mixer. The properties of the thermal compounds prepared using the CuO particles were observed by thermal conductivity and breakdown voltage measurement. Most importantly, the volume of thermal compounds created using CuO particles grown from 0.1 μm Cu particles increased by 192.5% and 125 % depending on the growth time. The composition of CuO was confirmed by X-ray diffraction (XRD) analysis; cross sections of the grown CuO particles were observed using focused ion beam (FIB), field emission scanning electron microscopy (FE-SEM), and energy dispersive analysis by X-ray (EDAX). In addition, the thermal compound dispersion of the Cu and Al elements were observed by X-ray elemental mapping.

Keywords:copper oxide;wet oxidation method;thermal interface material;thermal conductivity;breakdown voltage

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[5] Gwinn JP, Webb RL, Microelectron. J., 34, 215 (2003)

[6] Prasher R, Proc. IEEE, 94, 1571 (2006)

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[8] Yu AP, Ramesh P, Sun XB, Bekyarova E, Itkis ME, Haddon RC, Adv. Mater., 20(24), 4740 (2008)

[9] Yu W, Zhao J, Wang M, Hu Y, Chen L, Xie H, Nanoscale Res. Lett., 10, 113 (2015)

[10] Liu MS, Lin MC, Wang CC, Nanoscale Res. Lett., 6, 297 (2011)

[11] Rashin MN, Hemalatha J, J. Mol. Liq., 197, 257 (2014)

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[23] Tsu R, Mcpherson JW, Mckee WR, 38th Annual International Reliability Physics Symposium (San Jose, California, 2000).

[24] Nerle U, Rabinal MK, IOSR J. Appl. Phys., 5, 1 (2013)

[25] Hong J, Shim SE, Appl. Chem. Eng., 21(2), 115 (2010)