In order to find the effect of hydrogen (H) treatment on leakage current and current conduction mechanism in GaN nanorods (NRs) Schottky diode, GaN NRs surface was subjected to H plasma treatment. Experimental results showed that Schottky barrier height (Phi(b))increased, while the ideality factor (n) decreases by the H treatment. The Phi(b), n of as-grown GaN NRs were found to be 0.54 eV, 2.16, on the other hand in H treated GaN NRs Schottky diodes, Phi(b) was found to be increase to 0.72 eV, and n decreased to 1.30. Barrier inhomogeneity was confirmed by temperature dependence I-V parameters. The surface state density (N-SS) calculated from Terman's method were found to be 1.21 x 10(13) eV(-1)cm(-2) and 2.15 x 10(12) eV(-1)cm(-2) for as-grown and H treated GaN NRs respectively. These results suggested H treatment effectively passivate the surface states and decreased N-SS could be leads to enhancement in the Schottky behavior of GaN NRs. (C) 2016 Elsevier B.V. All rights reserved.