We studied defects and stress distributions in mosaic epitaxial diamond film using a confocal Raman spectroscopy, with a special attention to the junction area between the crystals. The mosaics was grown by microwave plasma CVD on closely arranged (1 0 0)-oriented HPHT type Ib substrates. The width of stress affected and defect enriched region around the junction show a tendency of extending with the film thickness, from approximate to 40 mu m on the film-substrate interface to approximate to 250 mu m in the layer 500 mu m above the substrate, as found from the mosaics analysis in cross-section. The stress field around the junction demonstrates a complex pattern, with mixed domains of tensile and compressive stress, with maximum value of sigma approximate to 0.6 GPa. A similar non-uniform pattern was observed for defect distribution as well. No sign of amorphous sp(2) carbon in the junction zone was revealed. (C) 2017 Published by Elsevier B.V.