beta-SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was beta-SiC(001){111}//Si(001){111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 mu m/h, which is 5-200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing beta-SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8 degrees to the surface of substrate. The growth mechanism of the films was discussed.