Thin polycrystalline films (similar to 300 nm) with arbitrary grain orientation consisting of two phases, LiNbO3 and Nb2O5, were fabricated by using the Radio-Frequency Magnetron Sputtering (RFMS) method under a controlled Ar/O-2 environment. The amount of non-textured Nb2O5 phase is decreased by 20% in the LiNbO3/Nb2O5 films with reducing the oxygen content from 40 to 20% in the reactive gas mixture. The fabricated ferroelectric films exhibited the "local domain texture," i.e., the area of grains with the identical direction of the polar axis. Hall measurements suggest that two types of carries (holes and electrons) are present in the fabricated LiNbO3/Nb2O5 films and the type of majority charge carriers is changed from holes at low temperatures (similar to 50 K) to electrons with increasing temperature. At low temperatures charge transport is affected by the properties of the bulk grains with holes concentration of N-p = 6.5.1015 cm(-3) at temperatures T > 200 K conductivity is limited by the inter-granular barrier phi b = 0.13 eV regardless of the applied magnetic field. The presence of Nb2O5 phase is responsible for temperature transition of p- to n-type conduction in the studied films. (C) 2017 Elsevier B.V. All rights reserved.