A simulation study exploring the possibility of performance improvements for GaSb/InAs nanowire TFETs under appropriate stress conditions is carried out. It is demonstrated that biaxial tensile strain induces a remarkable enhancement of the on-state current thanks to bandgap reduction; however, a degradation of the ambipolar behavior is observed as well. Some stress intensity values and device geometry configurations are investigated. The best simulated device can achieve an on/off current ratio of about 3 x 10(7) with I-ON approximate to 0.33 mA/mu m at V-DD = 0.3 V. (C) 2016 Elsevier Ltd. All rights reserved.