A forming-free, compliance-current needless and hard-breakdown depressed resistive switching is demonstrated in Cu2O film. Different from the conventional resistive switching behaviors, this reversible switch is free from the forming process, and does not dependent on the direction of the initial electric field. The resistive switching effect may be triggered by the break and recovery of natural conductive path, and a dynamic model is proposed to explain the switching process. Meanwhile, the influence of degradation in local region is also discussed, which is important for switching mechanism understanding. These results are an important step towards the development of resistive switching devices and their applications. (C) 2016 Elsevier Ltd. All rights reserved.