Copper nitride (CuxN) thin films were prepared by plasma ion immersion implantation (PHI) then post processed with oxygen plasma implantation at a voltage of - 1.5 kV. The resistive-switching properties of the CuxN:O-based ARAM devices were studied with different oxygen implantation time from 0 to 20 min. The memory cells processed with oxygen plasma implantation for 5 min showed longest endurance performances, largest resistance window and highest yield. Linear fitting results of the electrical measurements indicated the formation of copper oxide (CuO) is benefit for prolonged cycle life of the CuxN based RRAM devices, while increasing Cu2O species will lead to severe performance degradation. (C) 2017 Elsevier B.V. All rights reserved.