화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.27, No.6, 345-349, June, 2017
DOI10.3740/MRSK.2017.27.6.345  Export Citation
InGaZnO 박막 트랜지스터의 전기 및 광학적 특성에 대한 전자빔 조사의 영향
Influence of Electron Beam Irradiation on the Electrical and Optical Properties of InGaZnO Thin Film Transistor
조인환1, 2, 박해웅2, 김찬중1, 전병혁1, †
  • 1한국원자력연구원 중성자응용연구부
  • 2한국기술교육대학교 에너지신소재화학공학부
In-Hwan Cho1, 2, Hai-Woong Park2, Chan-Joong Kim1, and Byung-Hyuk Jun1, †
  • 1Neutron Utilization Research Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea
  • 2Department of Energy Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan 31253, Republic of Korea
E-mail:
The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to 1.5 × 10 16 electrons/cm2. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level(EF) of the sample irradiated with 1.5 × 10 16 electrons/cm2 was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration.
Keywords:InGaZnO film;oxide semiconductor;electron beam irradiation;electrical property;optical property;oxygen vacancy
  1. Park JS, Maeng WJ, Kim HS, Park JS, Thin Solid Films, 520(6), 1679 (2012)
  2. Park JS, Kim H, Kim ID, J. Electroceram., 32, 117 (2014)
  3. Fortunato E, Barquinha P, Martins R, Adv. Mater., 24(22), 2945 (2012)
  4. Kim SJ, Yoon SH, Kim HJ, Jpn. J. Appl. Phys., 53, 02BA02 (2014)
  5. Park J, Kim YS, Ok KC, Park YC, Kim HY, Park JS, Kim HS, Sci. Rep., 6, 24787 (2016)
  6. Adamopoulos G, Bashir A, Thomas S, Gillin WP, Georgakopoulos S, Shkunov M, Baklar MA, Stingelin N, Maher RC, Cohen LF, Bradley DDC, Anthopoulos TD, Adv. Mater., 22(42), 4764 (2010)
  7. Kim YH, Heo JS, Kim TH, Park S, Yoon MH, Kim J, Oh MS, Yi GS, Noh YY, Park SK, Nature, 489, 128 (2012)
  8. Ahn BD, Park JS, Chung KB, Appl. Phys. Lett., 105, 163505 (2014)
  9. Indluru A, Holbert KE, Alford TL, Thin Solid Films, 539, 342 (2013)
  10. Kim GH, Ahn BD, Shin HS, Jeong WH, Kim HJ, Kim HJ, Appl. Phys. Lett., 94, 233501 (2009)
  11. Pu H, Zhou Q, Yue L, Zhang Q, Semicond. Sci. Technol., 28, 105002 (2013)
  12. Petti L, Munzenrieder N, Vogt C, Faber H, Buthe L, Cantarella G, Bottacchi F, Anthopoulos TD, Troster G, Appl. Phys. Rev., 3, 021303 (2016)
  13. Kim YJ, Yang BS, Oh S, Han SJ, Lee HW, Heo J, Jeong JK, Kim HJ, ACS Appl. Mater. Interfaces, 5, 3255 (2013)
  14. Park HW, Choi MJ, Jo J, Chung KB, Appl. Surf. Sci., 321, 520 (2013)
  15. Tak YJ, Ahn BD, Park SP, Kim SJ, Song AR, Chung KB, Kim HJ, Sci. Rep., 6, 21869 (2016)
  16. Jeon K, Shin SW, Jo J, Kim MS, Shin JC, Jeong C, Lim JH, Song J, Heo J, Kim JH, Curr. Appl. Phys., 14(11), 1591 (2014)
  17. Park HW, Jun BH, Choi D, Chung KB, Jpn. J. Appl. Phys., 55, 115701 (2016)
  18. Kim BK, Park JS, Kim DH, Chung KB, Appl. Phys. Lett., 104, 182106 (2014)
  19. Ok KC, Park Y, Chung KB, Park JS, Appl. Phys. Lett., 103, 213501 (2013)
  20. Park K, Park HW, Shin HS, Bae J, Park KS, Kang I, Chung KB, Kwon JY, IEEE Trans. Electron Devices, 62, 2900 (2015)