화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.27, No.7, 362-366, July, 2017
DOI10.3740/MRSK.2017.27.7.362  Export Citation
Improving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition
Hogyoung Kim†, Min Soo Kim1, Sung Yeon Ryu1, and Byung Joon Choi1
  • Department of Visual Optics, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
  • 1Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
E-mail:
We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of Au/Al2O3/n-Ge metal-insulator-semiconductor (MIS) diodes prepared with and without H2O prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the Al2O3 interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the Ge/Al2O3 interface.
Keywords:H2O prepulse treatment;atomic layer deposition(ALD);Al2O3 interlayer
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