CuS counter electrodes (CEs) were prepared to fabricate efficient quantum-dot-sensitized solar cells (QDSSCs) based on a CdS/CdSe photo sensitizer. The CEs were prepared on a fluorine-doped tin oxide (FTO) glass substrate by a facile chemical bath deposition (CBD) method by dissolving CuSO4 center dot 5H(2)O and CH3 CSNH2 in water, followed by adding 0.25 mM polyvinylpyrrolidone (PVP). The CBD was performed at 60 degrees C for 1 h, 2 h, and 3 h, and the samples were labeled as CuS 1 h, CuS 2 h, and CuS 3 h, respectively. The QDSSCs were assembled using prepared CuS CEs and a TiO2/CdS/CdSe/ZnS photoanode, and the effect of the growth time of CuS CEs on the QDSSC performance was investigated. As the CuS growth time increases, the short-circuit current density (J(sc)), fill factor (FF), and open-circuit voltage (V-oc) of the QDSSCs gradually increases, leading to an enhanced power conversion efficiency (11). QDSSCs that use the CuS 2 h CE exhibit a high J(sc) of 14.31 mA cm(-2), V-oc of 0.603 V, and FF of 0.49, which are higher than that using conventional Pt electrodes as well as CuS 1 h and CuS 3 h electrodes. The electrochemical impedance spectroscopy results show that the CuS 2 h CE exhibits an inferior charge transfer resistance of only 2.93 Omega, which is 33 times lesser than that of the Pt CE. The enhanced device performance of CuS 2 h is ascribed to the high catalytic activity and low charge transfer resistance of the CuS CE in the reduction process of oxidized polysulfide. Consequently, a superior power conversion efficiency of 4.27% is achieved for QDSSCs utilizing CuS 2 h. (C) 2017 Elsevier B.V. All rights reserved.