The dielectric-metal-dielectric tri-layer films have attracted much attention by virtue of their low-cost and high quality device performance as a transparent conductive electrode. Here, we report the deposition of Cr doped Ag films sandwiched between thin TiO2 layers and investigation on the surface microstructure, optical and electrical properties depending on the thickness of the Ag(Cr). The activation energy (1.18 eV) for grain growth of Ag was calculated from the Arrhenius plot using the law D-n - D-0(n) = kt, which was comparable to the bulk diffusion of Ag. This result indicated the grain growth of Ag was effectively retarded by the Cr addition, which was presumed to related with blocking the surface and grain boundary diffusion due to Cr segregation. Based on thermal stability of Cr added Ag film, we deposited TiO2/Ag(Cr)/TiO2 (TAT) multilayer thin films and with a 10 nm thick Ag(Cr), the TAT films showed high optical transmittance in the visible region (94.2%), low electrical resistivity (8.66 x 10(-5) Omega cm), and hence the high figure of merit 57.15 x 10(-3) Omega (-1) was achieved. The high transmittance of the TAT film was believed to be attributed to the low optical loss due to a reduction in the Ag layer thickness, the surface plasmon effect, and the electron scattering reduced by the Ag layer with a low electrical resistivity. (C) 2016 Elsevier B.V. All rights reserved.