We investigate the morphology and crystalline structure of Au/Ge films in a wide range of temperatures by in situ TEM heating. Au/Ge films with Au mass thickness of 0.2-0.3nm and Ge thickness of 5nm were produced in vacuum by the sequential deposition of components on a carbon substrate at room temperature. It has been shown that particles with an average size of 4nm, formed by Au film de-wetting, melt on the germanium substrate at temperatures 110-160 degrees C, which are below the eutectic temperature for the bulk. The effect of crystallization-induced capillary motion of liquid eutectic particles over Ge surface has been found in this work. Formation of metastable fcc phase of Ge has been observed at the liquid-germanium interface and behind the moving particle. Formation of a liquid phase with its subsequent crystallization at the metal-semiconductor interface seems to play a key role in the metal induced crystallization effect. (C) 2017 Elsevier B.V. All rights reserved.