We employed AuCl3-doped graphene as a p-type transparent conducting electrode (TCE) in an p-i-n type CH3NH3PbI3 perovskite solar cell using poly (3,4-ethylenedioxythiophene):poly(styrene sulfonate) and phenyl-C61-butyric acid methyl ester as the hole and electron transporting layers, respectively, and obtained 17.4-17.9% power conversion efficiency at 1 Sun condition. The work function of the AuCl3-doped graphene TCE was controllable from similar to 4.52 to similar to 4.86 eV. Due to the p-type doping by the AuCl3 treatment, the graphene TCE shows good hole mobility and greatly-improved sheet resistance (-70 ohm/cm(2)) compared to the pristine graphene TCE (similar to 890 ohm/cm(2)) but its transmittance was gradually decreased with the doping concentration (no). Owing to the trade-off correlation between the sheet resistance and the transmittance of the AuCl3-doped graphene TCE, the ratio of DC conductivity and optical conductivity was the highest at n(D) = 7.5 mM. Therefore, the highest performance was achievable by using 7.5 mM AuCl3-doped graphene TCE. (C) 2017 Elsevier B.V. All rights reserved.