Monolayer molybdenum disulfide (m-MoS2) has attracted significant interest due to its unique electronic and optical properties. Herein, we report the successful fabrication of high quality and continuous mMoS(2) films in a quasi-closed crucible encapsulated substrates via a three-zone chemical vapor deposition (CVD) system. Quasi-closed crucible lowers the concentration of precursors around substrates and makes the sulfurization rate gentle, which is beneficial for invariable m-MoS2 growth. Characterization results indicate that as-grown m-MoS2 films are of high crystallinity and high quality comparable to the exfoliated MoS2. This approach is also adapted to the growth of other transition metal dichalcogenides. (C) 2017 Published by Elsevier B.V.