By using dark-injection time-of-flight (ToF) and time-resolved electric-field-induced optical second harmonic generation (EFISHG) measurements, we studied carrier mobility mu of pentacene (Pen) thin film of ITO/Pen/Al and Au/Pen/polyimide/ITO diodes where pentacene film is similar to 100 nm in thickness. ToF showed that determination of transit time t(r) from trace of transient currents is difficult owing to large capacitive charging current. On the other hand, optical EFISHG is free from this charging current, and allows us to calculate hole and electron mobility as mu(h) = 1.8 x 10(-4) cm(2)/Vs and mu(e) = 7.6 x 10(-7) cm(2)/ Vs, respectively, by using the relation t(r) = d/mu integral E-tr(tc)(0)dt (d: Pen thickness, E(0): electric field across Pen), instead of the conventional relationship tr = d(2)/mu V (V: voltage across Pen). Time-resolved EFISHG measurement is useful for the determination of carrier mobility of organic thin film in organic devices. (C) 2017 Elsevier B.V. All rights reserved.